Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Spanning - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 330µA, 50mA |
transistor Type: | PNP - Pre-Biased |
Leverancier Device Pakket: | Mini3-G3-B |
Serie: | - |
Weerstand - emitterbasis (R2): | 47 kOhms |
Weerstand - basis (R1): | 10 kOhms |
Vermogen - Max: | 200mW |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-236-3, SC-59, SOT-23-3 |
Andere namen: | DRA2L14Y0L-ND DRA2L14Y0LTR |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 11 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
gedetailleerde beschrijving: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 100mA 200mW Surface Mount Mini3-G3-B |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Current - Collector Cutoff (Max): | 500nA |
Current - Collector (Ic) (Max): | 100mA |
Base Part Number: | DRA2L14 |
Email: | [email protected] |