DMG3N60SJ3
Onderdeel nummer:
DMG3N60SJ3
Fabrikant:
Diodes Incorporated
Beschrijving:
MOSFET BVDSS: 501V 650V TO251
Leid Free Status / RoHS Status:
Bevat lood / RoHS-conformiteit
beschikbare kwaliteit:
75986 Pieces
Aflevertijd:
1-2 days
Data papier:
DMG3N60SJ3.pdf

Invoering

We can supply DMG3N60SJ3, use the request quote form to request DMG3N60SJ3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG3N60SJ3.The price and lead time for DMG3N60SJ3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG3N60SJ3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-251
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, VGS:3.5 Ohm @ 1.5A, 10V
Vermogensverlies (Max):41W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3, IPak, Short Leads
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Fabrikant Standaard Levertijd:22 Weeks
Loodvrije status / RoHS-status:Contains lead / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:354pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:12.6nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):650V
gedetailleerde beschrijving:N-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251
Current - Continuous Drain (Id) @ 25 ° C:2.8A (Tc)
Email:[email protected]

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