Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | +25V, -5V |
Technologie: | SiCFET (Silicon Carbide) |
Leverancier Device Pakket: | Die |
Serie: | Z-FET™ |
Rds On (Max) @ Id, VGS: | 110 mOhm @ 20A, 20V |
Vermogensverlies (Max): | 313mW (Tj) |
Packaging: | Bulk |
Verpakking / doos: | Die |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1915pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs: | 90.8nC @ 20V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 20V |
Drain naar de Bron Voltage (Vdss): | 1200V |
gedetailleerde beschrijving: | N-Channel 1200V 50A (Tj) 313mW (Tj) Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C: | 50A (Tj) |
Email: | [email protected] |