Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-92-3 |
Serie: | - |
Rds On (Max) @ Id, VGS: | 6.4 Ohm @ 250mA, 10V |
Vermogensverlies (Max): | 350mW (Ta) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere namen: | BS107ARL1G-ND BS107ARL1GOSCT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 200V |
gedetailleerde beschrijving: | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 250mA (Ta) |
Email: | [email protected] |