TK18E10K3,S1X(S
Modello di prodotti:
TK18E10K3,S1X(S
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
MOSFET N-CH 100V 18A TO-220AB
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
65512 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
TK18E10K3,S1X(S.pdf

introduzione

We can supply TK18E10K3,S1X(S, use the request quote form to request TK18E10K3,S1X(S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK18E10K3,S1X(S.The price and lead time for TK18E10K3,S1X(S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK18E10K3,S1X(S.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:-
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-220-3
Serie:U-MOSIV
Rds On (max) a Id, Vgs:42 mOhm @ 9A, 10V
Dissipazione di potenza (max):-
imballaggio:Tube
Contenitore / involucro:TO-220-3
Altri nomi:TK18E10K3S1X(S
TK18E10K3S1XS
temperatura di esercizio:150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Carica Gate (Qg) (Max) @ Vgs:33nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione drain-source (Vdss):100V
Descrizione dettagliata:N-Channel 100V 18A (Ta) Through Hole TO-220-3
Corrente - Drain continuo (Id) @ 25 ° C:18A (Ta)
Email:[email protected]

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