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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > TK160F10N1L,LQ
TK160F10N1L,LQ
Modello di prodotti:
TK160F10N1L,LQ
fabbricante:
Toshiba Semiconductor and Storage
Descrizione:
X35 PB-F POWER MOSFET TRANSISTOR
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
65335 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
TK160F10N1L,LQ.pdf
Inchiesta

introduzione

We can supply TK160F10N1L,LQ, use the request quote form to request TK160F10N1L,LQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK160F10N1L,LQ.The price and lead time for TK160F10N1L,LQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK160F10N1L,LQ.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3.5V @ 1mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-220SM(W)
Serie:U-MOSVIII-H
Rds On (max) a Id, Vgs:2.4 mOhm @ 80A, 10V
Dissipazione di potenza (max):375W (Tc)
Contenitore / involucro:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Altri nomi:TK160F10N1LLQ
temperatura di esercizio:175°C
Tipo montaggio:Surface Mount
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:10100pF @ 10V
Carica Gate (Qg) (Max) @ Vgs:122nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):6V, 10V
Tensione drain-source (Vdss):100V
Descrizione dettagliata:N-Channel 100V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
Corrente - Drain continuo (Id) @ 25 ° C:160A (Ta)
Email:[email protected]

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