PSMN1R2-25YL,115 - Componenti attivi - Diodi a circuiti integrati - MCU CPLD FPGA IC

PSMN1R2-25YL,115

Modello di prodotti:: PSMN1R2-25YL,115

fabbricante:: Nexperia

Descrizione:: MOSFET N-CH 25V 100A LFPAK

Stato Lead senza piombo / RoHS:: Senza piombo / RoHS conforme

quantità disponibile:: 23918 Pieces

Tempo di consegna:: 1-2 days

Scheda dati:: PSMN1R2-25YL,115.pdf

Inchiesta

introduzione

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Specifiche

Condizione	New & Unused, Original Packing
Origine	Contact us
Vgs (th) (max) a Id:	2.15V @ 1mA
Vgs (Max):	±20V
Tecnologia:	MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:	LFPAK56, Power-SO8
Serie:	-
Rds On (max) a Id, Vgs:	1.2 mOhm @ 15A, 10V
Dissipazione di potenza (max):	121W (Tc)
imballaggio:	Cut Tape (CT)
Contenitore / involucro:	SOT-1023, 4-LFPAK
Altri nomi:	1727-4277-1 568-4909-1 568-4909-1-ND
temperatura di esercizio:	-55°C ~ 150°C (TJ)
Tipo montaggio:	Surface Mount
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Stato senza piombo / Stato RoHS:	Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:	6380pF @ 12V
Carica Gate (Qg) (Max) @ Vgs:	105nC @ 10V
Tipo FET:	N-Channel
Caratteristica FET:	-
Tensione dell'azionamento (Max Rds On, Min Rds On):	4.5V, 10V
Tensione drain-source (Vdss):	25V
Descrizione dettagliata:	N-Channel 25V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8
Corrente - Drain continuo (Id) @ 25 ° C:	100A (Tc)
Email:	[email protected]

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introduzione

Specifiche

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