PSMN165-200K,518 - Componenti attivi - Diodi a circuiti integrati - MCU CPLD FPGA IC

PSMN165-200K,518

Modello di prodotti:: PSMN165-200K,518

fabbricante:: Nexperia

Descrizione:: MOSFET N-CH 200V 2.9A SOT96-1

Stato Lead senza piombo / RoHS:: Senza piombo / RoHS conforme

quantità disponibile:: 39463 Pieces

Tempo di consegna:: 1-2 days

Scheda dati:: PSMN165-200K,518.pdf

Inchiesta

introduzione

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Specifiche

Condizione	New & Unused, Original Packing
Origine	Contact us
Vgs (th) (max) a Id:	4V @ 1mA
Vgs (Max):	±20V
Tecnologia:	MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:	8-SO
Serie:	TrenchMOS™
Rds On (max) a Id, Vgs:	165 mOhm @ 2.5A, 10V
Dissipazione di potenza (max):	3.5W (Tc)
imballaggio:	Tape & Reel (TR)
Contenitore / involucro:	8-SOIC (0.154", 3.90mm Width)
Altri nomi:	934056597518 PSMN165-200K /T3 PSMN165-200K /T3-ND
temperatura di esercizio:	-55°C ~ 150°C (TJ)
Tipo montaggio:	Surface Mount
Moisture Sensitivity Level (MSL):	2 (1 Year)
Stato senza piombo / Stato RoHS:	Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:	1330pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:	40nC @ 10V
Tipo FET:	N-Channel
Caratteristica FET:	-
Tensione dell'azionamento (Max Rds On, Min Rds On):	10V
Tensione drain-source (Vdss):	200V
Descrizione dettagliata:	N-Channel 200V 2.9A (Tc) 3.5W (Tc) Surface Mount 8-SO
Corrente - Drain continuo (Id) @ 25 ° C:	2.9A (Tc)
Email:	[email protected]

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introduzione

Specifiche

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