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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > PMZB790SN,315
PMZB790SN,315
PMZB790SN,315
Modello di prodotti:
PMZB790SN,315
fabbricante:
Nexperia
Descrizione:
MOSFET N-CH 60V SGL 3DFN
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
11399 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
PMZB790SN,315.pdf
Inchiesta

introduzione

We can supply PMZB790SN,315, use the request quote form to request PMZB790SN,315 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMZB790SN,315.The price and lead time for PMZB790SN,315 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMZB790SN,315.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:3V @ 250µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:DFN1006B-3
Serie:-
Rds On (max) a Id, Vgs:940 mOhm @ 300mA, 10V
Dissipazione di potenza (max):360mW (Ta), 2.7W (Tc)
imballaggio:Tape & Reel (TR)
Contenitore / involucro:3-XFDFN
Altri nomi:568-10846-2
934065871315
PMZB790SN,315-ND
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:35pF @ 30V
Carica Gate (Qg) (Max) @ Vgs:1.37nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):4.5V, 10V
Tensione drain-source (Vdss):60V
Descrizione dettagliata:N-Channel 60V 650mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
Corrente - Drain continuo (Id) @ 25 ° C:650mA (Ta)
Email:[email protected]

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