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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXTA200N085T
IXTA200N085T
IXTA200N085T
Modello di prodotti:
IXTA200N085T
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 85V 200A TO-263
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
31749 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXTA200N085T.pdf
Inchiesta

introduzione

We can supply IXTA200N085T, use the request quote form to request IXTA200N085T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA200N085T.The price and lead time for IXTA200N085T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA200N085T.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:4V @ 250µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-263 (IXTA)
Serie:TrenchMV™
Rds On (max) a Id, Vgs:5 mOhm @ 25A, 10V
Dissipazione di potenza (max):480W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:7600pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:152nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):85V
Descrizione dettagliata:N-Channel 85V 200A (Tc) 480W (Tc) Surface Mount TO-263 (IXTA)
Corrente - Drain continuo (Id) @ 25 ° C:200A (Tc)
Email:[email protected]

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