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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXTA1N80
IXTA1N80
IXTA1N80
Modello di prodotti:
IXTA1N80
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 800V 750MA TO-263
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
49902 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
IXTA1N80.pdf
Inchiesta

introduzione

We can supply IXTA1N80, use the request quote form to request IXTA1N80 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA1N80.The price and lead time for IXTA1N80 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA1N80.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:4.5V @ 25µA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-263 (IXTA)
Serie:-
Rds On (max) a Id, Vgs:11 Ohm @ 500mA, 10V
Dissipazione di potenza (max):40W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:220pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:8.5nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):800V
Descrizione dettagliata:N-Channel 800V 750mA (Tc) 40W (Tc) Surface Mount TO-263 (IXTA)
Corrente - Drain continuo (Id) @ 25 ° C:750mA (Tc)
Email:[email protected]

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