IXFN25N90 - Componenti attivi - Diodi a circuiti integrati - MCU CPLD FPGA IC

IXFN25N90

Modello di prodotti:: IXFN25N90

fabbricante:: IXYS Corporation

Descrizione:: MOSFET N-CH 900V 25A SOT-227B

Stato Lead senza piombo / RoHS:: Senza piombo / RoHS conforme

quantità disponibile:: 45894 Pieces

Tempo di consegna:: 1-2 days

Scheda dati:: IXFN25N90.pdf

Inchiesta

introduzione

We can supply IXFN25N90, use the request quote form to request IXFN25N90 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN25N90.The price and lead time for IXFN25N90 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN25N90.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione	New & Unused, Original Packing
Origine	Contact us
Vgs (th) (max) a Id:	5V @ 8mA
Vgs (Max):	±20V
Tecnologia:	MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:	SOT-227B
Serie:	HiPerFET™
Rds On (max) a Id, Vgs:	330 mOhm @ 500mA, 10V
Dissipazione di potenza (max):	600W (Tc)
imballaggio:	Tube
Contenitore / involucro:	SOT-227-4, miniBLOC
temperatura di esercizio:	-55°C ~ 150°C (TJ)
Tipo montaggio:	Chassis Mount
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Stato senza piombo / Stato RoHS:	Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:	10800pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:	240nC @ 10V
Tipo FET:	N-Channel
Caratteristica FET:	-
Tensione dell'azionamento (Max Rds On, Min Rds On):	10V
Tensione drain-source (Vdss):	900V
Descrizione dettagliata:	N-Channel 900V 25A (Tc) 600W (Tc) Chassis Mount SOT-227B
Corrente - Drain continuo (Id) @ 25 ° C:	25A (Tc)
Email:	[email protected]

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introduzione

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