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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT80SM120B
APT80SM120B
Modello di prodotti:
APT80SM120B
fabbricante:
Microsemi
Descrizione:
POWER MOSFET - SIC
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
36661 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT80SM120B.pdf
Inchiesta

introduzione

We can supply APT80SM120B, use the request quote form to request APT80SM120B pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT80SM120B.The price and lead time for APT80SM120B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT80SM120B.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.5V @ 1mA
Vgs (Max):+25V, -10V
Tecnologia:SiCFET (Silicon Carbide)
Contenitore dispositivo fornitore:TO-247
Serie:-
Rds On (max) a Id, Vgs:55 mOhm @ 40A, 20V
Dissipazione di potenza (max):555W (Tc)
imballaggio:Bulk
Contenitore / involucro:TO-247-3
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Carica Gate (Qg) (Max) @ Vgs:235nC @ 20V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):20V
Tensione drain-source (Vdss):1200V
Descrizione dettagliata:N-Channel 1200V 80A (Tc) 555W (Tc) Through Hole TO-247
Corrente - Drain continuo (Id) @ 25 ° C:80A (Tc)
Email:[email protected]

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