Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 3.5V @ 150µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | PG-TO252-3 |
Seri: | CoolMOS™ CE |
Rds Pada (Max) @ Id, Vgs: | 650 mOhm @ 1.8A, 13V |
Power Disipasi (Max): | 69W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nama lain: | IPD50R650CEATMA1-ND IPD50R650CEATMA1TR SP001117708 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 342pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 13V |
Tiriskan untuk Sumber Tegangan (Vdss): | 500V |
Detil Deskripsi: | N-Channel 500V 6.1A (Tc) 69W (Tc) Surface Mount PG-TO252-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 6.1A (Tc) |
Email: | [email protected] |