FDC655BN_NBNN007
Nomor bagian:
FDC655BN_NBNN007
Pabrikan:
AMI Semiconductor / ON Semiconductor
Deskripsi:
MOSFET N-CH 30V 6.3A SUPERSOT6
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
64016 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
FDC655BN_NBNN007.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:SuperSOT™-6
Seri:PowerTrench®
Rds Pada (Max) @ Id, Vgs:25 mOhm @ 6.3A, 10V
Power Disipasi (Max):800mW
Paket / Case:SOT-23-6 Thin, TSOT-23-6
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 6.3A 800mW Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25 ° C:6.3A
Email:[email protected]

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