SIHG33N65E-GE3
SIHG33N65E-GE3
Dio brojeva:
SIHG33N65E-GE3
Proizvođač:
Vishay / Siliconix
Opis:
MOSFET N-CH 650V 32.4A TO-247AC
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
69795 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
SIHG33N65E-GE3.pdf

Uvod

We can supply SIHG33N65E-GE3, use the request quote form to request SIHG33N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N65E-GE3.The price and lead time for SIHG33N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Napon - ispitivanje:4040pF @ 100V
Napon - kvar:TO-247AC
Vgs (th) (maks.) @ Id:105 mOhm @ 16.5A, 10V
Vgs (Max):10V
Tehnologija:MOSFET (Metal Oxide)
Niz:-
RoHS Status:Digi-Reel®
Rds On (Max) @ Id, Vgs:32.4A (Tc)
Polarizacija:TO-247-3
Druga imena:SIHG33N65E-GE3DKR
Radna temperatura:-55°C ~ 150°C (TJ)
Vrsta montaže:Through Hole
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Proizvođač Standardno vrijeme dovršetka:20 Weeks
Broj proizvođača:SIHG33N65E-GE3
Ulazni kapacitet (Ciss) (maks.) @ Vds:173nC @ 10V
Vrsta IGBT-a:±30V
Punjenje vrata (Qg) (maks.) @ Vgs:4V @ 250µA
FET značajka:N-Channel
Prošireni opis:N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Ispustite izvor napona (Vdss):-
Opis:MOSFET N-CH 650V 32.4A TO-247AC
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:650V
Omjer kapaciteta:313W (Tc)
Email:[email protected]

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