TPMR10J S1G
TPMR10J S1G
Modèle de produit:
TPMR10J S1G
Fabricant:
TSC (Taiwan Semiconductor)
La description:
DIODE GEN PURP 600V 10A TO277A
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
54736 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TPMR10J S1G.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:1.8V @ 10A
Tension - inverse (Vr) (max):600V
Package composant fournisseur:TO-277A (SMPC)
La vitesse:Fast Recovery = 200mA (Io)
Séries:-
Temps de recouvrement inverse (trr):40ns
Emballage:Tape & Reel (TR)
Package / Boîte:TO-277, 3-PowerDFN
Autres noms:TPMR10J S1GTR
TPMR10J S1GTR-ND
TPMR10JS1GTR
Température d'utilisation - Jonction:-55°C ~ 175°C
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:7 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 600V 10A Surface Mount TO-277A (SMPC)
Courant - fuite, inverse à Vr:10µA @ 600V
Courant - Rectifié moyenne (Io):10A
Capacité à Vr, F:140pF @ 4V, 1MHz
Email:[email protected]

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