TK4P50D(T6RSS-Q)
Modèle de produit:
TK4P50D(T6RSS-Q)
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 500V 4A DPAK-3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
17294 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK4P50D(T6RSS-Q).pdf

introduction

We can supply TK4P50D(T6RSS-Q), use the request quote form to request TK4P50D(T6RSS-Q) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK4P50D(T6RSS-Q).The price and lead time for TK4P50D(T6RSS-Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK4P50D(T6RSS-Q).We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.4V @ 1mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:D-Pak
Séries:π-MOSVII
Rds On (Max) @ Id, Vgs:2 Ohm @ 2A, 10V
Dissipation de puissance (max):80W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:TK4P50DT6RSSQ
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:380pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:9nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):500V
Description détaillée:N-Channel 500V 4A (Ta) 80W (Tc) Surface Mount D-Pak
Courant - Drainage continu (Id) à 25 ° C:4A (Ta)
Email:[email protected]

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