SQD50P03-07_GE3
SQD50P03-07_GE3
Modèle de produit:
SQD50P03-07_GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET P-CH 30V 50A TO252AA
quantité disponible:
27693 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SQD50P03-07_GE3.pdf

introduction

We can supply SQD50P03-07_GE3, use the request quote form to request SQD50P03-07_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQD50P03-07_GE3.The price and lead time for SQD50P03-07_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQD50P03-07_GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-252AA
Séries:-
Rds On (Max) @ Id, Vgs:7 mOhm @ 20A, 10V
Dissipation de puissance (max):136W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Capacité d'entrée (Ciss) (Max) @ Vds:5490pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:146nC @ 10V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):30V
Description détaillée:P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
Courant - Drainage continu (Id) à 25 ° C:50A (Tc)
Email:[email protected]

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