SIS496EDNT-T1-GE3
SIS496EDNT-T1-GE3
Modèle de produit:
SIS496EDNT-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N-CH 30V 50A POWERPAK1212
quantité disponible:
77606 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIS496EDNT-T1-GE3.pdf

introduction

We can supply SIS496EDNT-T1-GE3, use the request quote form to request SIS496EDNT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS496EDNT-T1-GE3.The price and lead time for SIS496EDNT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS496EDNT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PowerPAK® 1212-8
Séries:-
Rds On (Max) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Dissipation de puissance (max):52W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® 1212-8
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Capacité d'entrée (Ciss) (Max) @ Vds:1515pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:45nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 50A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Courant - Drainage continu (Id) à 25 ° C:50A (Tc)
Email:[email protected]

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