SI4946BEY-T1-E3
Modèle de produit:
SI4946BEY-T1-E3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET 2N-CH 60V 6.5A 8-SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
22731 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SI4946BEY-T1-E3.pdf

introduction

We can supply SI4946BEY-T1-E3, use the request quote form to request SI4946BEY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4946BEY-T1-E3.The price and lead time for SI4946BEY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4946BEY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Package composant fournisseur:8-SO
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:41 mOhm @ 5.3A, 10V
Puissance - Max:3.7W
Emballage:Original-Reel®
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:SI4946BEY-T1-E3DKR
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:33 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:840pF @ 30V
Charge de la porte (Qg) (Max) @ Vgs:25nC @ 10V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):60V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:6.5A
Numéro de pièce de base:SI4946
Email:[email protected]

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