SI4561DY-T1-E3
Modèle de produit:
SI4561DY-T1-E3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N/P-CH 40V 6.8A 8-SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
50017 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SI4561DY-T1-E3.pdf

introduction

We can supply SI4561DY-T1-E3, use the request quote form to request SI4561DY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4561DY-T1-E3.The price and lead time for SI4561DY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4561DY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Package composant fournisseur:8-SO
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:35.5 mOhm @ 5A, 10V
Puissance - Max:3W, 3.3W
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:640pF @ 20V
Charge de la porte (Qg) (Max) @ Vgs:20nC @ 10V
type de FET:N and P-Channel
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):40V
Description détaillée:Mosfet Array N and P-Channel 40V 6.8A, 7.2A 3W, 3.3W Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:6.8A, 7.2A
Numéro de pièce de base:SI4561
Email:[email protected]

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