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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - bipolaire (BJT) - tableaux > SG2803J-883B
SG2803J-883B
SG2803J-883B
Modèle de produit:
SG2803J-883B
Fabricant:
Microsemi
La description:
TRANS 8NPN DARL 50V 0.5A 18DIP
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
33047 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SG2803J-883B.pdf
Enquête

introduction

We can supply SG2803J-883B, use the request quote form to request SG2803J-883B pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SG2803J-883B.The price and lead time for SG2803J-883B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SG2803J-883B.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Transistor Type:8 NPN Darlington
Package composant fournisseur:18-CDIP
Séries:-
Puissance - Max:-
Emballage:Tube
Package / Boîte:-
Autres noms:1259-1084
1259-1084-MIL
Q10610783
Q10991540
Q11657753
SG2803J883B
Température de fonctionnement:-55°C ~ 125°C (TA)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:-
Description détaillée:Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA Through Hole 18-CDIP
Gain en courant DC (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
Courant - Collecteur Cutoff (Max):-
Courant - Collecteur (Ic) (max):500mA
Email:[email protected]

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