RN2404TE85LF
Modèle de produit:
RN2404TE85LF
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS PREBIAS PNP 0.2W S-MINI
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
47899 Pieces
Heure de livraison:
1-2 days
Fiche technique:
RN2404TE85LF.pdf

introduction

We can supply RN2404TE85LF, use the request quote form to request RN2404TE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2404TE85LF.The price and lead time for RN2404TE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2404TE85LF.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:PNP - Pre-Biased
Package composant fournisseur:S-Mini
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms
Résistance - Base (R1):47 kOhms
Puissance - Max:200mW
Emballage:Cut Tape (CT)
Package / Boîte:TO-236-3, SC-59, SOT-23-3
Autres noms:RN2404TE85LFCT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:200MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount S-Mini
Gain en courant DC (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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