RJK0602DPN-E0#T2
RJK0602DPN-E0#T2
Modèle de produit:
RJK0602DPN-E0#T2
Fabricant:
Renesas Electronics America
La description:
MOSFET N-CH 60V 100A TO220
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
50743 Pieces
Heure de livraison:
1-2 days
Fiche technique:
RJK0602DPN-E0#T2.pdf

introduction

We can supply RJK0602DPN-E0#T2, use the request quote form to request RJK0602DPN-E0#T2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RJK0602DPN-E0#T2.The price and lead time for RJK0602DPN-E0#T2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RJK0602DPN-E0#T2.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:-
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:-
Rds On (Max) @ Id, Vgs:3.9 mOhm @ 50A, 10V
Dissipation de puissance (max):150W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:6450pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:90nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):60V
Description détaillée:N-Channel 60V 110A (Ta) 150W (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:110A (Ta)
Email:[email protected]

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