RCD041N25TL
RCD041N25TL
Modèle de produit:
RCD041N25TL
Fabricant:
LAPIS Semiconductor
La description:
MOSFET N-CH 250V 4A CPT3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
41940 Pieces
Heure de livraison:
1-2 days
Fiche technique:
RCD041N25TL.pdf

introduction

We can supply RCD041N25TL, use the request quote form to request RCD041N25TL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RCD041N25TL.The price and lead time for RCD041N25TL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RCD041N25TL.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5.5V @ 1mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:CPT3
Séries:-
Rds On (Max) @ Id, Vgs:1300 mOhm @ 2A, 10V
Dissipation de puissance (max):850mW (Ta), 20W (Tc)
Emballage:Cut Tape (CT)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:RCD041N25TLCT
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:350pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:8.5nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):250V
Description détaillée:N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Courant - Drainage continu (Id) à 25 ° C:4A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes