PMT760EN,135
PMT760EN,135
Modèle de produit:
PMT760EN,135
Fabricant:
NXP Semiconductors / Freescale
La description:
MOSFET N-CH 100V SC-73
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
10294 Pieces
Heure de livraison:
1-2 days
Fiche technique:
PMT760EN,135.pdf

introduction

We can supply PMT760EN,135, use the request quote form to request PMT760EN,135 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMT760EN,135.The price and lead time for PMT760EN,135 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMT760EN,135.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:SOT-223
Séries:-
Rds On (Max) @ Id, Vgs:950 mOhm @ 800mA, 10V
Dissipation de puissance (max):800mW (Ta), 6.2W (Tc)
Emballage:Cut Tape (CT)
Package / Boîte:TO-261-4, TO-261AA
Autres noms:568-10829-1
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:160pF @ 80V
Charge de la porte (Qg) (Max) @ Vgs:3nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):100V
Description détaillée:N-Channel 100V 900mA (Ta) 800mW (Ta), 6.2W (Tc) Surface Mount SOT-223
Courant - Drainage continu (Id) à 25 ° C:900mA (Ta)
Email:[email protected]

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