NTZD3156CT1G
NTZD3156CT1G
Modèle de produit:
NTZD3156CT1G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET N/P-CH 20V SOT-563
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
53731 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NTZD3156CT1G.pdf

introduction

We can supply NTZD3156CT1G, use the request quote form to request NTZD3156CT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTZD3156CT1G.The price and lead time for NTZD3156CT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTZD3156CT1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Package composant fournisseur:SOT-563
Séries:-
Rds On (Max) @ Id, Vgs:550 mOhm @ 540mA, 4.5V
Puissance - Max:250mW
Emballage:Tape & Reel (TR)
Package / Boîte:SOT-563, SOT-666
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:72pF @ 16V
Charge de la porte (Qg) (Max) @ Vgs:2.5nC @ 4.5V
type de FET:N and P-Channel
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):20V
Description détaillée:Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Courant - Drainage continu (Id) à 25 ° C:540mA, 430mA
Email:[email protected]

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