NCV33152DR2G
Modèle de produit:
NCV33152DR2G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
IC MOSFET DRVR DUAL HS 8-SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
5050 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NCV33152DR2G.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Alimentation:6.1 V ~ 18 V
Package composant fournisseur:8-SOIC
Séries:-
Rise / Fall Time (Typ):36ns, 32ns
Emballage:Original-Reel®
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:NCV33152DR2GOSDKR
Température de fonctionnement:-40°C ~ 150°C (TJ)
Nombre de conducteurs:2
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:39 Weeks
Tension logique - VIL, VIH:0.8V, 2.6V
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type d'entrée:Non-Inverting
Type de porte:N-Channel MOSFET
Configuration pilotée:Low-Side
Description détaillée:Low-Side Gate Driver IC Non-Inverting 8-SOIC
Current - Peak Output (Source, Évier):1.5A, 1.5A
courant de charge:Independent
Email:[email protected]

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