NCP5359ADR2G
Modèle de produit:
NCP5359ADR2G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
IC MOSFET GATE DVR DUAL 8-SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
63772 Pieces
Heure de livraison:
1-2 days
Fiche technique:
NCP5359ADR2G.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Alimentation:10 V ~ 13.2 V
Package composant fournisseur:8-SOIC
Séries:-
Rise / Fall Time (Typ):16ns, 15ns
Emballage:Cut Tape (CT)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:NCP5359ADR2GOSCT
Température de fonctionnement:0°C ~ 150°C (TJ)
Nombre de conducteurs:2
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Tension logique - VIL, VIH:1V, 2V
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type d'entrée:Non-Inverting
Côté haut potentiel - Max (Bootstrap):30V
Type de porte:N-Channel MOSFET
Configuration pilotée:Half-Bridge
Description détaillée:Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Current - Peak Output (Source, Évier):-
courant de charge:Synchronous
Numéro de pièce de base:NCP5359
Email:[email protected]

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