MURD550PFT4G
MURD550PFT4G
Modèle de produit:
MURD550PFT4G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
DIODE GEN PURP 520V 5A DPAK
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
22914 Pieces
Heure de livraison:
1-2 days
Fiche technique:
MURD550PFT4G.pdf

introduction

We can supply MURD550PFT4G, use the request quote form to request MURD550PFT4G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MURD550PFT4G.The price and lead time for MURD550PFT4G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MURD550PFT4G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:5A
Tension - Ventilation:DPAK-3
Séries:SWITCHMODE™
État RoHS:Tape & Reel (TR)
Temps de recouvrement inverse (trr):Fast Recovery = 200mA (Io)
Résistance @ Si, F:-
Polarisation:TO-252-3, DPak (2 Leads + Tab), SC-63
Température d'utilisation - Jonction:95ns
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:MURD550PFT4G
Description élargie:Diode Standard 520V 5A Surface Mount DPAK-3
Configuration diode:5µA @ 520V
La description:DIODE GEN PURP 520V 5A DPAK
Courant - fuite, inverse à Vr:1.15V @ 5A
Courant - Moyen redressé (Io) (par diode):520V
Capacité à Vr, F:-65°C ~ 175°C
Email:[email protected]

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