MUR4L60HB0G
MUR4L60HB0G
Modèle de produit:
MUR4L60HB0G
Fabricant:
TSC (Taiwan Semiconductor)
La description:
DIODE GEN PURP 600V 4A DO201AD
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
15881 Pieces
Heure de livraison:
1-2 days
Fiche technique:
MUR4L60HB0G.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:1.28V @ 4A
Tension - inverse (Vr) (max):600V
Package composant fournisseur:DO-201AD
La vitesse:Fast Recovery = 200mA (Io)
Séries:Automotive, AEC-Q101
Temps de recouvrement inverse (trr):50ns
Emballage:Bulk
Package / Boîte:DO-201AD, Axial
Température d'utilisation - Jonction:-55°C ~ 175°C
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:12 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 600V 4A Through Hole DO-201AD
Courant - fuite, inverse à Vr:10µA @ 600V
Courant - Rectifié moyenne (Io):4A
Capacité à Vr, F:65pF @ 4V, 1MHz
Email:[email protected]

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