MTP23P06VG
MTP23P06VG
Modèle de produit:
MTP23P06VG
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET P-CH 60V 23A TO220AB
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
71015 Pieces
Heure de livraison:
1-2 days
Fiche technique:
MTP23P06VG.pdf

introduction

We can supply MTP23P06VG, use the request quote form to request MTP23P06VG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MTP23P06VG.The price and lead time for MTP23P06VG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MTP23P06VG.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±15V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 11.5A, 10V
Dissipation de puissance (max):90W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:MTP23P06VGOS
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1620pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:50nC @ 10V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):60V
Description détaillée:P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:23A (Tc)
Email:[email protected]

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