JANTX1N5809URS
Modèle de produit:
JANTX1N5809URS
Fabricant:
Microsemi
La description:
DIODE GEN PURP 100V 3A BPKG
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
43995 Pieces
Heure de livraison:
1-2 days
Fiche technique:
JANTX1N5809URS.pdf

introduction

We can supply JANTX1N5809URS, use the request quote form to request JANTX1N5809URS pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JANTX1N5809URS.The price and lead time for JANTX1N5809URS depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# JANTX1N5809URS.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:875mV @ 4A
Tension - inverse (Vr) (max):100V
Package composant fournisseur:B, SQ-MELF
La vitesse:Fast Recovery = 200mA (Io)
Séries:Military, MIL-PRF-19500/477
Temps de recouvrement inverse (trr):30ns
Emballage:Bulk
Package / Boîte:SQ-MELF, B
Autres noms:1086-19442
1086-19442-MIL
Température d'utilisation - Jonction:-65°C ~ 175°C
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Type de diode:Standard
Description détaillée:Diode Standard 100V 3A Surface Mount B, SQ-MELF
Courant - fuite, inverse à Vr:5µA @ 100V
Courant - Rectifié moyenne (Io):3A
Capacité à Vr, F:60pF @ 10V, 1MHz
Email:[email protected]

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