JANTX1N4150UR-1
JANTX1N4150UR-1
Modèle de produit:
JANTX1N4150UR-1
Fabricant:
Microsemi
La description:
DIODE GEN PURP 50V 200MA DO213AA
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
56121 Pieces
Heure de livraison:
1-2 days
Fiche technique:
JANTX1N4150UR-1.pdf

introduction

We can supply JANTX1N4150UR-1, use the request quote form to request JANTX1N4150UR-1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number JANTX1N4150UR-1.The price and lead time for JANTX1N4150UR-1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# JANTX1N4150UR-1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:200mA
Tension - Ventilation:DO-213AA
Séries:Military, MIL-PRF-19500/231
État RoHS:Bulk
Temps de recouvrement inverse (trr):Small Signal =< 200mA (Io), Any Speed
Résistance @ Si, F:-
Polarisation:DO-213AA
Autres noms:1086-15180
1086-15180-MIL
Température d'utilisation - Jonction:4ns
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:15 Weeks
Référence fabricant:JANTX1N4150UR-1
Description élargie:Diode Standard 50V 200mA Surface Mount DO-213AA
Configuration diode:100nA @ 50V
La description:DIODE GEN PURP 50V 200MA DO213AA
Courant - fuite, inverse à Vr:1V @ 200mA
Courant - Moyen redressé (Io) (par diode):50V
Capacité à Vr, F:-65°C ~ 175°C
Email:[email protected]

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