Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTH50N25T
IXTH50N25T
IXTH50N25T
Modèle de produit:
IXTH50N25T
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 250V 50A TO-247
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
21774 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTH50N25T.pdf
Enquête

introduction

We can supply IXTH50N25T, use the request quote form to request IXTH50N25T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH50N25T.The price and lead time for IXTH50N25T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTH50N25T.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-247 (IXTH)
Séries:-
Rds On (Max) @ Id, Vgs:60 mOhm @ 25A, 10V
Dissipation de puissance (max):400W (Tc)
Emballage:Tube
Package / Boîte:TO-247-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:4000pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:78nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):250V
Description détaillée:N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
Courant - Drainage continu (Id) à 25 ° C:50A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes IXTH50N25T

image Modèle de produit Fabricant La description Vue
IXTH4N150 Image IXTH4N150 IXYS Corporation MOSFET N-CH 1500V 4A TO-247 Enquête
IXTH48N65X2 Image IXTH48N65X2 IXYS Corporation MOSFET N-CH 650V 48A TO-247 Enquête
IXTH500N04T2 Image IXTH500N04T2 IXYS Corporation MOSFET N-CH 40V 500A TO-247 Enquête
IXTH54N30T Image IXTH54N30T IXYS Corporation MOSFET N-CH 300V 54A TO-247 Enquête
IXTH50P10 Image IXTH50P10 IXYS Corporation MOSFET P-CH 100V 50A TO-247AD Enquête
IXTH50P085 Image IXTH50P085 IXYS Corporation MOSFET P-CH 85V 50A TO-247AD Enquête
IXTH5N100A Image IXTH5N100A IXYS Corporation MOSFET N-CH 1000V 5A TO247AD Enquête
IXTH48N15 Image IXTH48N15 IXYS Corporation MOSFET N-CH 150V 48A TO-247 Enquête
IXTH60N10 Image IXTH60N10 IXYS Corporation MOSFET N-CH 100V 60A TO-247 Enquête
IXTH50N20 Image IXTH50N20 IXYS Corporation MOSFET N-CH 200V 50A TO-247AD Enquête
IXTH60N15 Image IXTH60N15 IXYS Corporation MOSFET N-CH 150V 60A TO-247 Enquête
IXTH460P2 Image IXTH460P2 IXYS Corporation MOSFET N-CH 500V 24A TO-247 Enquête
IXTH48P20P Image IXTH48P20P IXYS Corporation MOSFET P-CH 200V 48A TO-247 Enquête
IXTH48N20T Image IXTH48N20T IXYS Corporation MOSFET N-CH 200V 48A TO-247 Enquête
IXTH52P10P Image IXTH52P10P IXYS Corporation MOSFET P-CH 100V 52A TO-247 Enquête
IXTH48N20 Image IXTH48N20 IXYS Corporation MOSFET N-CH 200V 48A TO-247 Enquête
IXTH52N65X Image IXTH52N65X IXYS Corporation MOSFET N-CH 650V 52A TO-247 Enquête
IXTH50N30 Image IXTH50N30 IXYS Corporation MOSFET N-CH 300V 50A TO-247 Enquête
IXTH56N15T Image IXTH56N15T IXYS Corporation MOSFET N-CH 150V 56A TO-247 Enquête
IXTH450P2 Image IXTH450P2 IXYS Corporation MOSFET N-CH 500V 16A TO247 Enquête

Latest Nouvelles