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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTB30N100L
IXTB30N100L
IXTB30N100L
Modèle de produit:
IXTB30N100L
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 1000V 30A PLUS264
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
40718 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTB30N100L.pdf
Enquête

introduction

We can supply IXTB30N100L, use the request quote form to request IXTB30N100L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTB30N100L.The price and lead time for IXTB30N100L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTB30N100L.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PLUS264™
Séries:-
Rds On (Max) @ Id, Vgs:450 mOhm @ 500mA, 20V
Dissipation de puissance (max):800W (Tc)
Emballage:Tube
Package / Boîte:TO-264-3, TO-264AA
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:13200pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:545nC @ 20V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):20V
Tension drain-source (Vdss):1000V
Description détaillée:N-Channel 1000V 30A (Tc) 800W (Tc) Through Hole PLUS264™
Courant - Drainage continu (Id) à 25 ° C:30A (Tc)
Email:[email protected]

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