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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > IXTA1R6N100D2HV
IXTA1R6N100D2HV
IXTA1R6N100D2HV
Modèle de produit:
IXTA1R6N100D2HV
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH
quantité disponible:
13159 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXTA1R6N100D2HV.pdf
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introduction

We can supply IXTA1R6N100D2HV, use the request quote form to request IXTA1R6N100D2HV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTA1R6N100D2HV.The price and lead time for IXTA1R6N100D2HV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTA1R6N100D2HV.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 100µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-263HV
Séries:-
Rds On (Max) @ Id, Vgs:10 Ohm @ 800mA, 0V
Dissipation de puissance (max):100W (Tc)
Package / Boîte:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Délai de livraison standard du fabricant:24 Weeks
Capacité d'entrée (Ciss) (Max) @ Vds:645pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:27nC @ 5V
type de FET:N-Channel
Fonction FET:Depletion Mode
Tension d'entraînement (Max Rds activé, Min Rds activé):0V
Tension drain-source (Vdss):1000V
Description détaillée:N-Channel 1000V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV
Courant - Drainage continu (Id) à 25 ° C:1.6A (Tj)
Email:[email protected]

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