IXFH230N10T
IXFH230N10T
Modèle de produit:
IXFH230N10T
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 100V 230A TO-247
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
64669 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IXFH230N10T.pdf

introduction

We can supply IXFH230N10T, use the request quote form to request IXFH230N10T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH230N10T.The price and lead time for IXFH230N10T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH230N10T.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-247AD (IXFH)
Séries:HiPerFET™
Rds On (Max) @ Id, Vgs:4.7 mOhm @ 500mA, 10V
Dissipation de puissance (max):650W (Tc)
Emballage:Tube
Package / Boîte:TO-247-3
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:15300pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:250nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):100V
Description détaillée:N-Channel 100V 230A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)
Courant - Drainage continu (Id) à 25 ° C:230A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes