IPS040N03LGAKMA1
Modèle de produit:
IPS040N03LGAKMA1
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N-CH 30V 90A TO251-3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
61740 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IPS040N03LGAKMA1.pdf

introduction

We can supply IPS040N03LGAKMA1, use the request quote form to request IPS040N03LGAKMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPS040N03LGAKMA1.The price and lead time for IPS040N03LGAKMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPS040N03LGAKMA1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.2V @ 250µA
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PG-TO251-3
Séries:OptiMOS™
Rds On (Max) @ Id, Vgs:4 mOhm @ 30A, 10V
Dissipation de puissance (max):79W (Tc)
Emballage:Tube
Package / Boîte:TO-251-3 Stub Leads, IPak
Autres noms:SP000810846
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:3900pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:38nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 90A (Tc) 79W (Tc) Through Hole PG-TO251-3
Courant - Drainage continu (Id) à 25 ° C:90A (Tc)
Email:[email protected]

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