IMH6AT108
IMH6AT108
Modèle de produit:
IMH6AT108
Fabricant:
LAPIS Semiconductor
La description:
TRANS PREBIAS DUAL NPN SMT6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
58640 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IMH6AT108.pdf

introduction

We can supply IMH6AT108, use the request quote form to request IMH6AT108 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IMH6AT108.The price and lead time for IMH6AT108 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IMH6AT108.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor Type:2 NPN - Pre-Biased (Dual)
Package composant fournisseur:SMT6
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms
Résistance - Base (R1):47 kOhms
Puissance - Max:300mW
Emballage:Tape & Reel (TR)
Package / Boîte:SC-74, SOT-457
Autres noms:IMH6AT108-ND
IMH6AT108TR
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:250MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
Gain en courant DC (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Numéro de pièce de base:*MH6
Email:[email protected]

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