IMD10AMT1G
IMD10AMT1G
Modèle de produit:
IMD10AMT1G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS NPN/PNP PREBIAS SC74R
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
14247 Pieces
Heure de livraison:
1-2 days
Fiche technique:
IMD10AMT1G.pdf

introduction

We can supply IMD10AMT1G, use the request quote form to request IMD10AMT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IMD10AMT1G.The price and lead time for IMD10AMT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IMD10AMT1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Package composant fournisseur:SC-74R
Séries:-
Résistance - Base de l'émetteur (R2):10 kOhms
Résistance - Base (R1):13 kOhms, 130 Ohms
Puissance - Max:285mW
Emballage:Cut Tape (CT)
Package / Boîte:SOT-23-6 Thin, TSOT-23-6
Autres noms:IMD10AMT1GOSCT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:9 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:-
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V / 68 @ 100mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):500mA
Email:[email protected]

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