HUF76639P3
HUF76639P3
Modèle de produit:
HUF76639P3
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET N-CH 100V 50A TO-220AB
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
63747 Pieces
Heure de livraison:
1-2 days
Fiche technique:
HUF76639P3.pdf

introduction

We can supply HUF76639P3, use the request quote form to request HUF76639P3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF76639P3.The price and lead time for HUF76639P3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF76639P3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:UltraFET™
Rds On (Max) @ Id, Vgs:26 mOhm @ 51A, 10V
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:Q1053436
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2400pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:86nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension drain-source (Vdss):100V
Description détaillée:N-Channel 100V 51A (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:51A (Tc)
Email:[email protected]

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