HN2A01FU-Y(TE85L,F
HN2A01FU-Y(TE85L,F
Modèle de produit:
HN2A01FU-Y(TE85L,F
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS 2PNP 50V 0.15A US6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
15751 Pieces
Heure de livraison:
1-2 days
Fiche technique:
HN2A01FU-Y(TE85L,F.pdf

introduction

We can supply HN2A01FU-Y(TE85L,F, use the request quote form to request HN2A01FU-Y(TE85L,F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN2A01FU-Y(TE85L,F.The price and lead time for HN2A01FU-Y(TE85L,F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN2A01FU-Y(TE85L,F.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor Type:2 PNP (Dual)
Package composant fournisseur:US6
Séries:-
Puissance - Max:200mW
Emballage:Tape & Reel (TR)
Package / Boîte:6-TSSOP, SC-88, SOT-363
Autres noms:HN2A01FU-Y(TE85LFTR
Température de fonctionnement:125°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:80MHz
Description détaillée:Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
Gain en courant DC (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):150mA
Email:[email protected]

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