FDMC7672_F125
FDMC7672_F125
Modèle de produit:
FDMC7672_F125
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
IC POWER MANAGEMENT
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
37661 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FDMC7672_F125.pdf

introduction

We can supply FDMC7672_F125, use the request quote form to request FDMC7672_F125 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDMC7672_F125.The price and lead time for FDMC7672_F125 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDMC7672_F125.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:8-MLP (3.3x3.3)
Séries:PowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs:5.7 mOhm @ 16.9A, 10V
Dissipation de puissance (max):2.3W (Ta), 33W (Tc)
Emballage:Bulk
Package / Boîte:8-PowerWDFN
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:3890pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:57nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 16.9A (Ta), 20A (Tc) 2.3W (Ta), 33W (Tc) Surface Mount 8-MLP (3.3x3.3)
Courant - Drainage continu (Id) à 25 ° C:16.9A (Ta), 20A (Tc)
Email:[email protected]

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