FDC6301N_G
Modèle de produit:
FDC6301N_G
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET 2 N-CH 25V SUPERSOT6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
36795 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FDC6301N_G.pdf

introduction

We can supply FDC6301N_G, use the request quote form to request FDC6301N_G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDC6301N_G.The price and lead time for FDC6301N_G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDC6301N_G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.5V @ 250µA
Package composant fournisseur:SuperSOT™-6
Séries:-
Rds On (Max) @ Id, Vgs:4 Ohm @ 400mA, 4.5V
Puissance - Max:700mW
Emballage:Tape & Reel (TR)
Package / Boîte:SOT-23-6 Thin, TSOT-23-6
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:9.5pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:0.7nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Surface Mount SuperSOT™-6
Courant - Drainage continu (Id) à 25 ° C:220mA
Email:[email protected]

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