FCPF11N60NT
FCPF11N60NT
Modèle de produit:
FCPF11N60NT
Fabricant:
La description:
MOSFET N-CH 600V 10.8A TO220F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
47358 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FCPF11N60NT.pdf

introduction

We can supply FCPF11N60NT, use the request quote form to request FCPF11N60NT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FCPF11N60NT.The price and lead time for FCPF11N60NT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FCPF11N60NT.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:1505pF @ 100V
Tension - Ventilation:TO-220F
Vgs (th) (Max) @ Id:299 mOhm @ 5.4A, 10V
Vgs (Max):10V
La technologie:MOSFET (Metal Oxide)
Séries:SuperMOS™
État RoHS:Tube
Rds On (Max) @ Id, Vgs:10.8A (Tc)
Polarisation:TO-220-3 Full Pack
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:6 Weeks
Référence fabricant:FCPF11N60NT
Capacité d'entrée (Ciss) (Max) @ Vds:35.6nC @ 10V
type de IGBT:±30V
Charge de la porte (Qg) (Max) @ Vgs:4V @ 250µA
Fonction FET:N-Channel
Description élargie:N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F
Tension drain-source (Vdss):-
La description:MOSFET N-CH 600V 10.8A TO220F
Courant - Drainage continu (Id) à 25 ° C:600V
Ratio de capacité:32.1W (Tc)
Email:[email protected]

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