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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - bipolaire (BJT) - Single, pré biaisé > EML17T2R
EML17T2R
EML17T2R
Modèle de produit:
EML17T2R
Fabricant:
LAPIS Semiconductor
La description:
TRANS PREBIAS PNP 0.12W EMT5
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
68524 Pieces
Heure de livraison:
1-2 days
Fiche technique:
EML17T2R.pdf
Enquête

introduction

We can supply EML17T2R, use the request quote form to request EML17T2R pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EML17T2R.The price and lead time for EML17T2R depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EML17T2R.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor Type:PNP - Pre-Biased + Diode
Package composant fournisseur:EMT5
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms
Résistance - Base (R1):47 kOhms
Puissance - Max:120mW
Emballage:Tape & Reel (TR)
Package / Boîte:6-SMD (5 Leads), Flat Lead
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:250MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 30mA 250MHz 120mW Surface Mount EMT5
Gain en courant DC (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):30mA
Email:[email protected]

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