EMC5DXV5T1
EMC5DXV5T1
Modèle de produit:
EMC5DXV5T1
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
TRANS PREBIAS NPN/PNP SOT553
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
11573 Pieces
Heure de livraison:
1-2 days
Fiche technique:
EMC5DXV5T1.pdf

introduction

We can supply EMC5DXV5T1, use the request quote form to request EMC5DXV5T1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EMC5DXV5T1.The price and lead time for EMC5DXV5T1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EMC5DXV5T1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Package composant fournisseur:SOT-553
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms, 10 kOhms
Résistance - Base (R1):47 kOhms, 4.7 kOhms
Puissance - Max:500mW
Emballage:Cut Tape (CT)
Package / Boîte:SOT-553
Autres noms:EMC5DXV5T1OSCT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Contains lead / RoHS non-compliant
Fréquence - Transition:-
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-553
Gain en courant DC (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 20 @ 5mA, 10V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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