DMN95H2D2HCTI
Modèle de produit:
DMN95H2D2HCTI
Fabricant:
Diodes Incorporated
La description:
MOSFET N-CH 950V 6A ITO220AB
État sans plomb / État RoHS:
Contient du plomb / conforme à la directive RoHS
quantité disponible:
62631 Pieces
Heure de livraison:
1-2 days
Fiche technique:
DMN95H2D2HCTI.pdf

introduction

We can supply DMN95H2D2HCTI, use the request quote form to request DMN95H2D2HCTI pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMN95H2D2HCTI.The price and lead time for DMN95H2D2HCTI depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMN95H2D2HCTI.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:ITO-220AB
Séries:-
Rds On (Max) @ Id, Vgs:2.2 Ohm @ 3A, 10V
Dissipation de puissance (max):40W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3 Full Pack, Isolated Tab
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Délai de livraison standard du fabricant:8 Weeks
Statut sans plomb / Statut RoHS:Contains lead / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1487pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:20.3nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):950V
Description détaillée:N-Channel 950V 6A (Tc) 40W (Tc) Through Hole ITO-220AB
Courant - Drainage continu (Id) à 25 ° C:6A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes